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APT44GA60B APT44GA60S
600V High Speed PT IGBT
TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT44GA60B poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Single die IGBT
(R)
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current Gate-Emitter Voltage 2 Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
1
Ratings
600 78 44 130 30 337 130A @ 600V -55 to 150 300
Unit
V
A
V W
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 26A VCE = 600V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
600
Typ
2.0 1.9 4.5
Max
2.5 6 250 2500 100
Unit
V
VGE =VCE , IC = 1mA
A nA
052-6333 Rev C 6 - 2009
VGS = 30V
Thermal and Mechanical Characteristics
Symbol
RJC WT Torque
Characteristic
Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min
-
Typ
5.9
Max
.37 -
Unit
C/W g in*lbf
10
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on tr td(off) tf Eon2 Eoff6
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 26A TJ = 150C, RG = 4.74, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V IC = 26A RG = 4.74 TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V IC = 26A RG = 4.74 TJ = +125C 130 16 14 84 29 409 258 14 15 109 99 621 474
APT44GA60B_S
Typ
3404 358 43 128 22 44 nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Min
Max
Unit
A
ns
J
ns
J
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6333 Rev C 6 - 2009
Typical Performance Curves
100
V
GE
APT44GA60B_S
300 TJ= 125C TJ= 150C IC, COLLECTOR CURRENT (A) 15V 250 200 150 100 50 0 13V
= 15V
IC, COLLECTOR CURRENT (A)
TJ= 55C 75 TJ= 25C
10V
50
9V 8V 7V 6V 5V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 26A C T = 25C
J
25
0
0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
350 300 250 200 150 100
16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 GATE CHARGE (nC) FIGURE 4, Gate charge 140 VCE = 300V VCE = 480V
IC, COLLECTOR CURRENT (A)
VCE = 120V
TJ= 25C 50 00 TJ= 125C 2 4 6 8 TJ= -55C 10 12 14
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
4 IC = 52A 3 IC = 26A 2 IC = 13A 1
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
5
4 IC = 52A IC = 26A 2 IC = 13A 1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
3
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10
0
6
0
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
0
25
100
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 IC, DC COLLECTOR CURRENT (A)
80
60
40 052-6333 Rev C 6 - 2009
20
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
0
25
50
Typical Performance Curves
20 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 150 125 100 75 50 25 0
VCE = 400V RG = 4.7 L = 100H VGE =15V,TJ=25C
APT44GA60B_S
15 VGE = 15V 10
VGE =15V,TJ=125C
5
VCE = 400V TJ = 25C, or 125C RG = 4.7 L = 100H
0 10 20 30 40 50 60 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 50
RG = 4.7, L = 100H, VCE = 400V
0
0 10 20 30 40 50 60 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 160 140
RG = 4.7, L = 100H, VCE = 400V
40 120 tr, RISE TIME (ns) tr, FALL TIME (ns) 30 100 80 60 40 20 0 10 20 30 40 50 60 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 2000 EOFF, TURN OFF ENERGY LOSS (J) Eon2, TURN ON ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 4.7
G
TJ = 125C, VGE = 15V
20
TJ = 25 or 125C,VGE = 15V
10
TJ = 25C, VGE = 15V
0
0 10 20 30 40 50 60 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1400 1200 1000 800 600 400 200 0
TJ = 25C
V = 400V CE V = +15V GE R = 4.7
G
0
1600
1200
TJ = 125C
TJ = 125C
800
400
TJ = 25C
0 10 20 30 40 50 60 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 3000 SWITCHING ENERGY LOSSES (J) 2500 2000 1500 1000 500 0
Eoff,26A Eon2,26A Eoff,13A Eon2,13A
V = 400V CE V = +15V GE T = 125C
J
0
0 10 20 30 40 50 60 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 2000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE R = 4.7
G
Eon2,52A
Eon2,52A Eon2,52A
1600
Eon2,52A
1200
052-6333 Rev C 6 - 2009
800
Eoff,26A Eoff,26A Eon2,13A Eoff,13A
400
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
Typical Performance Curves
10000 Cies IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 100 1000
APT44GA60B_S
1000
10
Coes 100
1
Cres 0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 10
1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.40 ZJC, THERMAL IMPEDANCE (C/W) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.1 0.05 10
-5
D = 0.9
0.7
0.5
Note:
PDM
0.3
t1 t2
SINGLE PULSE 10
-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-2 10-3 0.1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1
052-6333 Rev C 6 - 2009
APT44GA60B_S
10% Gate Voltage td(on) 90% TJ = 125C
APT30DQ120
tr
V CC IC V CE
Collector Current 5% Collector Voltage
5%
10%
A D.U.T.
Switching Energy
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C Gate Voltage Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
e3 SAC: Tin, Silver, Copper
Collector (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D3 Pak Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
1.04 (.041) 1.15(.045)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
052-6333 Rev C 6 - 2009
Gate Collector Emitter
Heat Sink (Collector) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Emitter Collector Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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